
公益社団法人 応用物理学会
半導体の結晶成長と加工および評価に関する産学連携委員会
Industry-academia collaboration committee on semiconductor crystal growth, processing and characterization, The Japan Society of Applied Physics (JSAP)

Welcome to 9th International Symposium on Advanced Science and Technology of Silicon and Related Materials!
第9回シリコンおよび関連材料の先端科学と技術国際シンポジウムのページへようこそ!
Hosted by Industry-academia collaboration committee on semiconductor crystal growth, processing and characterization, JSAP
Cooperation by Crystals Science and Technology Division, Silicon Technology Division, and Advanced Power Semiconductors Division, JSAP
主催:応用物理学会 半導体の結晶成長と加工および評価に関する産学連携委員会
協力:応用物理学会 結晶工学分科会、シリコンテクノロジー分科会、先進パワー半導体分科会
The 9th International Symposium on Advanced Science and Technology of Silicon and Related Materials
October 6-9, 2026
CHÂTERAISÉ HOTEL Nagano
Nagano, Japan
Important Date
[CLOSED] Abstract Submission Deadline: ̶A̶u̶g̶u̶s̶t̶ ̶1̶4̶ ̶(̶F̶r̶i̶.̶)̶,̶ ̶2̶0̶2̶6̶.
Notification of Abstract Acceptance: September 1 (Tue.), 2026
Early-bird Registration Deadline: September 7 (Mon.), 2026
Focus Collection of JJAP
Submission opens on October 13, 2026, and closes on November 13, 2026.
NEWS
Sep. 01, 2026: Timetable is now available
Aug. 31, 2026: Presentation guideline info is added
Jul. 31, 2026: Abstract Submission Deadline is extended to Aug. 14, 2026
Jul. 17, 2026: Online Registration is opened
May 31, 2026: JJAP Focus Collection info is added
May 26, 2026: Abstract Submission is opened
May 14, 2026: Tentative Timetable is added
Feb. 12, 2026: Sponsorship and Exhibit Opportunities info is added
Dec. 22, 2025: Invited Speaker info is added
Nov. 14, 2025: 9th Symposium Website Opened
General Info
Click each item below to view more details.
Conference Information
Scope of the symposium(9th)
The 9th International Symposium on Advanced Science and Technology of Silicon and Related Materials (hereinafter: this symposium) will be held from October 6-9, 2026, at the Chateraise Hotel Nagano in Nagano City, Nagano Prefecture, Japan. The 9th symposium will focus on silicon materials and silicon technology, which are driving a wide range of scientific and technological advancements, and will cover a broad spectrum of advanced research and technologies related to silicon materials and devices. Invited presentations are planned on recent research results and a review of the culmination of past work in crystal growth and wafer technology, theoretical analysis of defect behavior and composites in defects and impurities, the influence of point defects and light elements on precipitation behavior, and the application of machine learning and informatics technologies to crystal growth, and high-performance, highly sensitive physical analysis of crystals in advanced evaluation and analysis. There are also plans to hold sessions on advanced research and development related to Leading-edge Semiconductor Technology (LSTC) in Japan aiming for a technology node of 2 nm or less, and the development status of cutting-edge semiconductor devices with Gate-All-Around (GAA) structures. Furthermore, in the areas of Group IV-based device technology and wide-bandgap semiconductors such as SiC and GaN, presentations are planned on evaluation and analysis technologies related to crystal materials and processes, the development status of advanced CMOS, and power devices.
The program will be arranged with single session to provide ample time for discussion and communication among participants. Accordingly, the number of oral presentations consisting mainly of invited talks will be limited. Contributions to the program in the form of poster presentation will be welcome. Further information can be obtained from the Symposium homepage (https://www.jsap-sangaku-cryst.org/symposium).
History
From the first to the eighth symposium have been organized by the Japan Society for the Promotion of Science (JSPS) and its 145th Committee on Processing and Characterization of Crystals. Then, the 145th Committee was transferred to the "Industry-Academia Collaboration Committee on Crystal Growth, Processing, and Evaluation of Semiconductors, Japan Society of Applied Physics (JSAP)" on April 1, 2023. This 9th symposium will be the first one to be hosted by the Industry-Academia Collaboration Committee. In conjunction with the transfer to the JSAP, the symposium's name has been changed to "International Symposium on Advanced Science and Technology of Silicon and Related Materials" to focus on materials other than silicon and to encourage participation from researchers with diverse expertise across a wider range of semiconductor fields.
Topics
Advanced technologies for Beyond-2nm Advanced Logic Semiconductors
Crystal growth and wafer technology:
- Point-defect controlled wafer, Epi wafer, Annealed wafer
- SOI, GOI, Strained Si wafer
- Advanced wafer processing
Advanced characterization technology:
- Electron microscopy
- X-ray diffraction
- FTIR, PL, Other spectroscopic and optical imaging techniques
Defects and impurities:
- Point defects, Diffusion, Gettering
- Strain and stress
- Defect engineering for emerging materials
Photovoltaic Si:
- Impurities and defects in solar cell materials
- Crystal growth and advanced processing
Group IV semiconductor-based device technology:
- New materials for advanced CMOS devices
- Si power devices
SiC, Nitride semiconductors and other wide-bandgap materials:
- Bulk and epitaxial growth, Processing
- Defect characterization
- Power, high-frequency, and optical devices including LED and LD
- Advanced wafer processing
Informatics:
- Materials Informatics
- Process Informatics
- Measurement Informatics
- Physical Informatics
Contact
The symposium chairs as well as the local committee can be contacted via e-mail to info9thSi@protonmail.com
Please note that the Local Committee will not respond to emails sent to any other addresses.
Program
Click each item below to view more details.
Invited Speakers
- Dr. Koji Izunome, GlobalWafers Japan (Japan)
- Prof. Koji Usuda, Meiji University (Japan)
- Prof. Akinobu Teramoto, Hiroshima University (Japan)
- Dr. Koji Matsumoto, SUMCO Corporation (Japan)
- Prof. Toshiro Hiramoto, The University of Tokyo (Japan)
- Dr. Dawid Kot, IHP (Germany)
- Prof. Yongzhao Yao, Mie University (Japan)
- Prof. Michael Dudley, Stony Brook University (USA)
- Dr. Kazuhisa Torigoe, SUMCO Corporation (Japan)
- Dr. Vladimir Odnoblyudov, Qromis, Inc. (USA)
- Dr. Tomoyuki Uchida, Toray Research Center, Inc. (Japan)
- Dr. Andrey Smirnov, STR Belgrade (Serbia)
- Dr. Nobuya Nakazaki, Sony Semiconductor Solutions (Japan)
- Dr. Julie Widiez, CEA-Leti (France)
- Dr. Shota Seki, AIxtal Corporation (Japan)
- Dr. Can Zhu, SICC (China)
- Dr. Slobodan Mitic, PVA Technology Hub GmbH (Germany)
- Prof. Shigetaka Tomiya, Nara Institute of Science and Technology (Japan)
- Dr. Hanfei Yan, Brookhaven National Laboratory (USA)
- Dr. Ryo Hirose, SUMCO Corporation (Japan)
- Dr. Shogo Mochizuki, IBM Research (USA)
- Dr. Yuta Aoki, Matlantis Corporation (Japan)
Please click here for more details.
Timetable
Download the Timetable here
Advanced Program
TBA
For Authors
Click each item below to view more details.
Abstract Submission
If you wish to present your work at the symposium, please prepare a one-page A4 abstract in PDF format, following the instructions provided in the abstract template (download available at this link).
- Figures and tables may be included on one additional page.
- Please note that the abstract upload is limited to a maximum of 6MB and must be in PDF format.
- Note that all accepted abstracts will be presented in the short and poster session.
Abstract submission site: CLOSED
Submission deadline: A̶u̶g̶u̶s̶t̶ 7̶ (̶F̶r̶i̶.̶)̶,̶ 2̶0̶2̶6̶
>̶>̶>̶ ̶E̶x̶t̶e̶n̶d̶e̶d̶ ̶t̶o̶ ̶A̶u̶g̶u̶s̶t̶ ̶1̶4̶ ̶(̶F̶r̶i̶.̶)̶,̶ ̶2̶0̶2̶6̶
Notification of abstract acceptance: September 1 (Tue.), 2026
Presentation Guidline
◆ Short Presentation
- Presentation time: 2.5 min (w/o Q and A)
- Slide preparation:Power point(Screen aspect ratio 16:9)
- File name:「P-**_Author」e.g. 「P-37_Sueoka」
- Please provide your file at the reception desk
- Session will be conducted using a laptop provided by the committee
◆ Poster Presentation
- The maximum POSTER size is A0 format (84.1 × 118.9 cm)
- Mounting material (thumbtack) will be provided but will be able to use protective tape prepared by yourselves
Focus Collection of JJAP
Authors of accepted abstracts are encouraged to submit their original papers on the significant part of their work presented at this symposium to the Focus Collection (former Special Issue) of Japanese Journal of Applied Physics (JJAP) on Advanced Science and Technology of Silicon and Related Materials 2026 (JSAP Si Symposium 2026).
All papers submitted to the Focus Collection will be reviewed according to the same peer-review standards and acceptance criteria as regular JJAP papers. Submitted manuscripts must present original work containing new data and/or discussions and must not include material that has been previously published elsewhere in substantially the same form.
Submission Deadline: November 13, 2026 (Submission Opens: October 13, 2026)
URL: https://mc04.manuscriptcentral.com/jjaps-jsap
Note: Submissions made after the deadline and submissions from authors who did not present at this symposium will be rejected without peer review.
Article type
Regular Paper: original papers with comprehensive, detailed descriptions of the research work, presenting a fully developed discussion on the results obtained in relevant fields of applied physics. They must provide sufficient and self-contained information to ensure the repeatability of experiments and analyses by readers. There is no length limit for Regular Papers; however, the abstract should not exceed 150 words. Appropriate references should be listed; a typical Regular Paper should include 30 or more appropriate references.
Brief Note: short reports on significant improvements in instrumentation, fabrication processes, measurement techniques, and theoretical analyses, and also serve as an archive of knowledge useful for applied physics, such as important material parameters. The maximum length of a Brief Note is 2,700 words and 3 single-column width figures. An abstract of no more than 100 words should be provided. Other than this, Brief Notes should not be divided into sections. Appropriate references should be listed; a typical Brief Note should include 20 or more appropriate references.
Progress Review: concise and efficient overviews covering the latest progress in a specific research area of applied physics. They can include or be largely based on the recent results from the author(s). There is no length limit, although the manuscript should be written as concisely as possible and the abstract should not exceed 150 words.
Originality policy
Authors are requested to read JJAP Originality Policy carefully before submission.
https://iopscience.iop.org/journal/1347-4065/page/Editorial%20policy
https://cms.iopscience.org/62e553c3-db53-11f0-931d-a91b7eacc563/Originality_policy.pdf
Please see below for details.
For Attendees
Click each item below to view more details.
Registration Fees
Conference
Early-bird Registration [Deadline: September 7 at 23:55 JST]
- Student: JPY 22,000
- Corporate/Individual Member of this industry-academia collaboration committee*: JPY 77,000
- Non-Member (excluding member of this industry-academia collaboration committee*): JPY 88,000
Late Registration [Registration Period: September 8 at 00:00 JST – October 5 at 23:55 JST]
- Student: JPY 33,000
- Corporate/Individual Member of this industry-academia collaboration committee*: JPY 88,000
- Non-Member (excluding member of this industry-academia collaboration committee*): JPY 99,000
On-site Registration
- Student: JPY 44,000
- Non-Student: JPY 110,000
Registration fees include:
- Admission to all technical sessions
- Program Book
- Abstracts (provided from this website)
- Refreshments for coffee breaks (Lunch and Banquet are NOT included in the registration fee)
Banquet
[Deadline: September 18 at 23:55 JST]
- JPY 8,800 (per person)
*Tax included
*This Industry-academia collaboration committee: Industry-academia collaboration committee on semiconductor crystal growth, processing and characterization, JSAP
Payment
Please pay via the following Online Registration site: https://app.payvent.net/embedded_forms/show/6a3a3dd5bf3f311e1489bc1d
* Cancellation and Refund Policy: No refund will be granted for any occasion.
Banquet
The banquet will be held on Oct. 8 (Thu).
Sponsors
The 9th International Symposium on Advanced Science and Technology of Silicon and Related Materials will be held under the auspices of Industry-academia collaboration committee on semiconductor crystal growth, processing and characterization in JSAP and received financial assistance from the following companies.
Sponsorship and Exhibit Opportunities (in Japanese)
協賛・出展・広告について
本シンポジウムでは、招待講演、口頭発表、ポスター発表を中心として活発な議論が行われます。
企画・運営は、主に日本国内の大学・企業・研究機関に所属する委員で構成された実行委員会が担っておりますが、
開催に必要な費用は、参加者の参加費および企業・団体・法人の皆さまから頂戴する協賛・出展・広告掲載に掛かる費用によって賄われています。
このため、皆さまに協賛および出展・広告掲載のご協力をお願い申し上げる次第です。
協賛・出展・広告掲載をいただいた企業・団体・法人の皆さまには、所定のお礼をご用意しております。
なお、本シンポジウムは、公益社団法人応用物理学会「半導体の結晶成長と加工および評価に関する産学連携委員会」が主催となり初めての開催です。
そのため、本委員会の趣旨である産学連携を示すべく、協賛枠を設けております。
出展・広告につきましては、貴団体の優れた製品・サービス・技術力を広くアピールしていただける機会となります。
別紙の趣意書をご参照の上で当委員会および本シンポジウムの趣旨をご理解賜り、
協賛ならびに出展・広告掲載をご検討いただけますよう心よりお願い申し上げます。
・趣意書(クリックすると PDF ファイルがダウンロードされます)
・協賛・出展・広告依頼書(クリックすると Word ファイルがダウンロードされます。また、4ページ目が申込書です)
Symposium Venue
CHÂTERAISÉ HOTEL Nagano (1-1 Nanase, Nagano, 380-0922, Japan)
https://nagano.chateraisehotel.jp (in Japanese)
Committee
Organizing Committee
Chair: Toshinori Taishi (Shinshu University)
Vice-Chairs: Koji Sueoka (Okayama Prefectural University), Yasuhisa Sano (The University of Osaka), Yoshiki Tsukada (STR Japan)
Steering Committee
Chair: Toshinori Taishi (Shinshu University)
Members: Yoshiki Tsukada (STR Japan), Kentaro Kutsukake (Nagoya University), Mizue Kayama (Shinshu University), Takeshi Hoshikawa (Shinshu University), Miho Denda (Shinshu University)
Program Committee
Chair: Koji Sueoka (Okayama Prefectural University)
Members: Haruo Sudo (GlobalWafers Japan), Ryota Suewaka (SUMCO), Remi Konagaya (Sony Semiconductor Solutions)
Publication Committee
Chair: Yasuhisa Sano (The University of Osaka)
Member: Ryo Yokogawa (Hiroshima University)
Exhibition Committee
Chair: Yoshiki Tsukada (STR Japan)
Members: Satoko Nakagawa (GlobalWafers Japan), Ryusuke Yokoyama (SUMCO)
Finance Committee
Takahiro Kawamura (Mie University)
Executive Advisory
Michio Tajima (ISAS/JAXA, NPERC-J), Koichi Kakimoto (Tohoku University), Atsushi Ogura (Meiji University), Akira Sakai (The University of Osaka)
Website Building
Masashi Kurosawa (Nagoya University)
©2023 Industry-academia collaboration committee on semiconductor crystal growth, processing and characterization, JSAP.












